article · 18/04/2008
Electronically driven structure changes of si captured by femtosecond electron diffraction
Résumé
The excitation of a high density of carriers in semiconductors can induce an order-to-disorder phase transition due to changes in the potential-energy landscape of the lattice. We report the first direct resolution of the structural details of this phenomenon in freestanding films of polycrystalline and (001)-oriented crystalline Si, using 200-fs electron pulses. At excitation levels greater than similar to 6\% of the valence electron density, the crystalline structure of the lattice is lost in < 500 fs, a time scale indicative of an electronically driven phase transition. We find that the relaxation process along the modified potential is not inertial but rather involves multiple scattering towards the disordered state.
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Harb, M., Ernstorfer, R., Hebeisen, C.-T., Sciaini, G., Peng, W., Dartigalongue, T., Eriksson, M.-A., Lagally, M.-G., Kruglik, S.-G., & Miller, R.-J.-D. (2008). Electronically driven structure changes of si captured by femtosecond electron diffraction. Physical Review Letters, 100(15), 155504.1 - 155504.4. https://doi.org/10.1103/PhysRevLett.100.155504@article{Harb2008_65,
author = {Harb, Maher and Ernstorfer, Ralph and Hebeisen, Christoph T. and Sciaini, German and Peng, Weina and Dartigalongue, Thibault and Eriksson, Mark A. and Lagally, Max G. and Kruglik, Sergei G. and Miller, R. J. Dwayne},
year = {2008},
month = {4},
title = {Electronically driven structure changes of si captured by femtosecond electron diffraction},
journal = {Physical Review Letters},
publisher = {AMER PHYSICAL SOC},
volume = {100},
number = {15},
pages = {155504.1 - 155504.4},
address = {ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA},
abstract = {The excitation of a high density of carriers in semiconductors can induce an order-to-disorder phase transition due to changes in the potential-energy landscape of the lattice. We report the first direct resolution of the structural details of this phenomenon in freestanding films of polycrystalline and (001)-oriented crystalline Si, using 200-fs electron pulses. At excitation levels greater than similar to 6\textbackslash{}\% of the valence electron density, the crystalline structure of the lattice is lost in < 500 fs, a time scale indicative of an electronically driven phase transition. We find that the relaxation process along the modified potential is not inertial but rather involves multiple scattering towards the disordered state.},
url = {http://www.dx.doi.org/10.1103/PhysRevLett.100.155504},
doi = {10.1103/PhysRevLett.100.155504},
issn = {0031-9007},
}TY - JOUR
AU - Harb, Maher
AU - Ernstorfer, Ralph
AU - Hebeisen, Christoph T.
AU - Sciaini, German
AU - Peng, Weina
AU - Dartigalongue, Thibault
AU - Eriksson, Mark A.
AU - Lagally, Max G.
AU - Kruglik, Sergei G.
AU - Miller, R. J. Dwayne
PY - 2008
DA - 2008/04/18
TI - Electronically driven structure changes of si captured by femtosecond electron diffraction
JO - Physical Review Letters
VL - 100
IS - 15
PB - AMER PHYSICAL SOC
SN - 0031-9007
AB - The excitation of a high density of carriers in semiconductors can induce an order-to-disorder phase transition due to changes in the potential-energy landscape of the lattice. We report the first direct resolution of the structural details of this phenomenon in freestanding films of polycrystalline and (001)-oriented crystalline Si, using 200-fs electron pulses. At excitation levels greater than similar to 6\% of the valence electron density, the crystalline structure of the lattice is lost in < 500 fs, a time scale indicative of an electronically driven phase transition. We find that the relaxation process along the modified potential is not inertial but rather involves multiple scattering towards the disordered state.
SP - 155504.1
EP - 155504.4
DO - 10.1103/PhysRevLett.100.155504
UR - http://www.dx.doi.org/10.1103/PhysRevLett.100.155504
ER -